Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-07
2007-08-07
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C438S488000, C438S935000
Reexamination Certificate
active
10125529
ABSTRACT:
First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film102in an atmosphere containing oxygen in order to obtain a semiconductor film102bhaving large depressions and projections on the surface. Then, an oxidized film105aformed by the irradiation of the first laser light is removed. After that, an inert gas with an oxygen density of 10 ppm or below is blown thereto, and, at the same time, second laser light is irradiated thereto (the energy density is higher than that of the irradiation of the first laser light). Thus, the surface of the semiconductor film102bis flattened, and a semiconductor film102chaving fewer depressions and projections on the surface can be obtained.
REFERENCES:
patent: 4879176 (1989-11-01), Ouderkirk et al.
patent: 5212116 (1993-05-01), Yu
patent: 5244819 (1993-09-01), Yue
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5525550 (1996-06-01), Kato
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5604153 (1997-02-01), Tsubouchi et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5776812 (1998-07-01), Takahashi et al.
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5843833 (1998-12-01), Ohtani et al.
patent: 5861337 (1999-01-01), Zhang et al.
patent: 5899709 (1999-05-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 5956581 (1999-09-01), Yamazaki et al.
patent: 5960323 (1999-09-01), Wakita et al.
patent: 6027960 (2000-02-01), Kusumoto et al.
patent: 6048588 (2000-04-01), Engelsberg
patent: 6066516 (2000-05-01), Miyasaka
patent: 6071796 (2000-06-01), Voutsas
patent: 6072194 (2000-06-01), Wakita et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6124154 (2000-09-01), Miyasaka
patent: 6162667 (2000-12-01), Funai et al.
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6242292 (2001-06-01), Yamazaki et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6300176 (2001-10-01), Zhang et al.
patent: 6304329 (2001-10-01), Nitta et al.
patent: 6329269 (2001-12-01), Hamada et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6337259 (2002-01-01), Ueda et al.
patent: 6348369 (2002-02-01), Kusumoto et al.
patent: 6436745 (2002-08-01), Gotou et al.
patent: 6444507 (2002-09-01), Miyasaka
patent: 6486437 (2002-11-01), Tanabe
patent: 6517642 (2003-02-01), Horie et al.
patent: 6528359 (2003-03-01), Kusumoto et al.
patent: 6534353 (2003-03-01), Kuramasu et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6673126 (2004-01-01), Miyasaka
patent: 6706568 (2004-03-01), Nakajima
patent: 6803296 (2004-10-01), Miyairi
patent: 6855584 (2005-02-01), Yamazaki et al.
patent: 6906344 (2005-06-01), Yamazaki et al.
patent: 2002/0043660 (2002-04-01), Yamazaki et al.
patent: 2002/0153360 (2002-10-01), Yamazaki et al.
patent: 2003/0139066 (2003-07-01), Kusumoto et al.
patent: 2005/0019997 (2005-01-01), Kusumoto et al.
patent: 2005/0112850 (2005-05-01), Yamazaki et al.
patent: 0 651 431 (1995-05-01), None
patent: 07-183540 (1995-07-01), None
patent: 08-78329 (1996-03-01), None
patent: 09-102467 (1997-04-01), None
patent: 2001-15435 (2001-01-01), None
patent: 2001-060551 (2001-03-01), None
patent: 2002-93738 (2002-03-01), None
K. Suga et al., P-3:The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly-Si Films, SID Digest '00, SID International Symposium Digest of Technical Papers, Jan. 1, 2000, pp. 534-537.
Tanaka Koichiro
Yamazaki Shunpei
Isaac Stanetta
Lebentritt Michael
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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