Thin film magnetic memory device having redundant configuration

Details Thin film magnetic memory device having redundant configuration Thin film magnetic memory device having redundant configuration

2007-08-14

2007-08-14

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000, C365S200000, C365S209000, C365S210130, C365S220000, C365S230030

Reexamination Certificate

active

11519053

ABSTRACT:
Normal memory cells are arranged in rows and columns, and dummy memory cells are arranged to form dummy memory cell rows by sharing memory celf columns with the normal memory cells. When there is at least one defect in the normal memory cells and/or the dummy memory cells, replacement/repair is carried out using a redundant column in a unit of memory cell column. The redundant column includes not only spare memory cells for repair of the normal memory cells but also spare dummy memory cells for repair of the dummy memory cells.

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