Method for forming metal wiring in semiconductor device

Details Method for forming metal wiring in semiconductor device Method for forming metal wiring in semiconductor device

2007-10-02

2007-10-02

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21170

Reexamination Certificate

active

11134640

ABSTRACT:
Disclosed is a method for forming a metal wiring in a semiconductor device in order to improve the operational speed of the semiconductor device. The method includes the steps of depositing an interlayer dielectric film on a silicon substrate, in which the interlayer dielectric film has a contact hole for exposing a predetermined portion of the silicon substrate, depositing a barrier layer on the interlayer dielectric film having the contact hole, depositing a first tungsten layer on the barrier layer by using SiH4as a reaction gas, depositing a second tungsten layer on the first tungsten layer by using B2H6as a reaction gas, depositing a third tungsten layer on the second tungsten layer in such a manner that the contact hole is filled with the third tungsten layer, and selectively etching the third tungsten layer, the second tungsten layer, the first tungsten layer, and the barrier layer, thereby forming the metal wiring.

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