Self-aligned rear electrode for diode array element

Details Self-aligned rear electrode for diode array element Self-aligned rear electrode for diode array element

2007-06-26

2007-06-26

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S458000

Reexamination Certificate

active

11053066

ABSTRACT:
A PIN active pixel sensor array including self aligned encapsulated electrodes and a method for forming the same the method including forming an electrically conductive layer over a substrate; forming a first doped semiconducting layer over the conductive layer; photolithographically patterning and etching through a thickness portion of the first doped semiconducting layer and conductive layer to expose the substrate to form a plurality of spaced apart electrodes having an upper portion comprising the first doped semiconducting layer; blanket depositing a second doped semiconducting layer to cover the spaced apart electrodes including the exposed substrate; and, etching through at least a thickness portion of the second doped semiconducting layer.

REFERENCES:
patent: 6215164 (2001-04-01), Cao et al.
patent: 6300648 (2001-10-01), Mei et al.
patent: 6501065 (2002-12-01), Uppal et al.
patent: 2003/0111704 (2003-06-01), Theil et al.

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