Method and apparatus to improve pass transistor performance

Details Method and apparatus to improve pass transistor performance Method and apparatus to improve pass transistor performance

2007-11-13

2007-11-13

Whitmore, Stacy A (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

10919758

ABSTRACT:
A control circuit generates a temperature-dependent gate voltage for turning on a transistor. For NMOS transistors, the gate voltage is increased in response to decreases in temperature to compensate for corresponding increases in the transistor's threshold voltage, and is decreased in response to increases in temperature to compensate for corresponding increases in the transistor's gate oxide's susceptibility to breakdown. For PMOS transistors, the gate voltage is decreased in response to decreases in temperature, and is increased in response to increases in temperature. For some embodiments, the gate voltage is adjusted according to a predetermined relationship between gate voltage and temperature.

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Shakeri, K, et al., “Temperature variable supply voltage for power reduction”, Apr. 2002, IEEE Computer Society Annual Symposium on VLSI, pp. 64-67.

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