Semiconductor device using low-K material as interlayer...

Details Semiconductor device using low-K material as interlayer... Semiconductor device using low-K material as interlayer...

2007-08-14

2007-08-14

Luu, Chuong A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S637000, C438S586000

Reexamination Certificate

active

11179550

ABSTRACT:
A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the second insulating film having a dielectric constant lower than that of the first insulating film. A first wiring pattern is formed over the second insulating film. A conductive connection member buried in the second and first insulating films electrically interconnects the first wiring pattern and semiconductor element.

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