Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2007-06-26

2007-06-26

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S257000, C438S614000, C438S593000

Reexamination Certificate

active

11061900

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, including the steps of: forming on a second insulating film a first resist pattern having a first window; employing the first resist pattern as an etching mask to form first openings exposed from contact regions CR; forming, on a second conductive film, a second resist pattern having first resist portions; employing the second resist pattern as an etching mask to form first and second conductors, a floating gate and a control gate; forming a third resist pattern in regions I, II and III; and employing the third resist pattern as an etching mask to remove the portions of the second conductors under second windows.

REFERENCES:
patent: 6133096 (2000-10-01), Hung-Der-Su et al.
patent: 2006/0099798 (2006-05-01), Nakagawa
patent: 6-97457 (1994-04-01), None
Office Action dated May 24, 2006 issued in corresponding Korean Application No. 10-2005-0018550.

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