Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-20
2007-11-20
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S402000, C257S208000, C365S230040, C365S230060
Reexamination Certificate
active
11298515
ABSTRACT:
A twin-cell type semiconductor memory device in which the area of a chip can be reduced. In the twin-cell type semiconductor memory device for storing data in at least one pair of memory cells as complementary information, memory cells are arranged at each of a plurality of word lines at intervals at which bit lines are located. At least the one pair of memory cells, which have stored the complementary information and which indicate a plurality of areas each connected to a pair of bit lines, form a twin cell.
REFERENCES:
patent: 5698872 (1997-12-01), Takase et al.
patent: 6597599 (2003-07-01), Morihara et al.
patent: 2001-143463 (2001-05-01), None
Eto Satoshi
Matsumiya Masato
Sato Ayako
Arent & Fox LLP
Pert Evan
Tran Tan
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