Method for producing single crystal and single crystal

Details Method for producing single crystal and single crystal Method for producing single crystal and single crystal

2007-06-05

2007-06-05

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S030000, C117S032000, C117S019000, C117S020000

Reexamination Certificate

active

10561865

ABSTRACT:
The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.

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Voronkov, “The Mechanism of Swirl Defects Formation in Silicon,” Journal of Crystal Growth, vol. 59, pp. 625-643 {1982}.
Dupret et al., “Global Modelling of Heat Transfer in Crystal Growth Furnaces,” Int. J. Heat Mass Transfer, vol. 33, No. 9, pp. 1849-1871 {1990}.

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