Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-06-05
2007-06-05
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S795000, C257SE21411
Reexamination Certificate
active
10330015
ABSTRACT:
A method of efficiently forming a circuit using a thin film transistor with a semiconductor layer in which preferable crystallinity is obtained is provided. A location on which stress concentrates according to crystallization of a semiconductor layer formed on a substrate having unevenness corresponds to the edges and their vicinities of the unevenness provided on the substrate, that is, the boundary between a concave portion and a convex portion and its vicinities. Thus, the location in which stress concentration is caused can be specified and controlled according to the shape of a slit-shaped base layer. In addition, an island-like semiconductor layer (1305) which becomes the active layer of a TFT is formed on the concave portion or the convex portion of the substrate having the unevenness. At this time, at least a portion which becomes the channel formation region of the TFT is formed without crossing the boundary between the concave portion and the convex portion. Such TFTs are used in parallel to construct a TFT having a large channel width so that fluctuation in electrical characteristics is averaged.
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Isobe Atsuo
Shibata Hiroshi
Tanada Yoshifumi
Yamazaki Shunpei
Isaac Stanetta
Lebentritt Michael
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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