Semiconductor device with multi-staged cut side surfaces

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S788000, C257S620000

Reexamination Certificate

active

10938533

ABSTRACT:
A method for manufacturing a semiconductor device which enables favorable back-surface grinding of a semiconductor substrate with preventing a warp in the substrate, thereby manufacturing a thickness-reduced semiconductor device. A projection electrode is formed on a surface of a wafer. A resin layer is formed on the wafer surface to a thickness to bury a top of the projection electrode. A cut groove is formed in the resin layer along a scribe line formed on the wafer. Thereafter, grinding is made on a back surface of the wafer by the use of a grinder or the like. A surface portion of the resin layer is removed by etching or the like, to expose the top of the projection electrode. The wafer is cut along the cut groove to obtain individual semiconductor chip pieces.

REFERENCES:
patent: 4878992 (1989-11-01), Campanelli
patent: 6117347 (2000-09-01), Ishida
patent: 6281591 (2001-08-01), Nakamura
patent: 6353267 (2002-03-01), Ohuchi et al.
patent: 6492196 (2002-12-01), Chen
patent: 6656758 (2003-12-01), Shinogi et al.
patent: 6734083 (2004-05-01), Kobayashi
patent: 11-150090 (1999-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with multi-staged cut side surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with multi-staged cut side surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with multi-staged cut side surfaces will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3836368

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.