Method of forming contact plug on silicide structure

Details Method of forming contact plug on silicide structure Method of forming contact plug on silicide structure

2007-08-14

2007-08-14

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C438S649000, C438S734000

Reexamination Certificate

active

11052938

ABSTRACT:
A method of manufacturing a semiconductor device is provided comprising the steps of: (a) forming a semiconductor element on a substrate, the semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over the element and an insulating layer formed over the first etch stop layer; (b) forming an opening through the insulating layer over the contact region at least to the first etch stop layer; (c) removing a portion of the first etch stop layer contacting a selected contact region using a process that does not substantially oxidize with the contact region, to form a contact opening to the contact region; and (d) filling the contact opening with conductive material to form a contact.

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