Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-10-30
2007-10-30
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S711000, C438S725000, C257SE21218
Reexamination Certificate
active
10890653
ABSTRACT:
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer. Methods involve implementing a plasma operation using hydrogen and a weak oxidizing agent, such as carbon dioxide. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.
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Goto Haruhiro (Harry)
Kalinovski Ilia
Mohamed Khalid
Beyer & Weaver, LLP
Estrada Michelle
Novellus Systems Inc.
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