Method for fabrication of a contact structure

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

10755844

ABSTRACT:
A method for producing a contact structure on a structured surface comprising producing a first conductive layer on the structured surface, wherein the first conductive layer comprising tungsten. A conductive seed layer is produced on the first conductive layer, the contact structure being produced by electroplating on the seed layer. The first conductive layer serves as an etch stop for selectively removing substrate material from the backside.

REFERENCES:
patent: 5608264 (1997-03-01), Gaul
patent: 5618752 (1997-04-01), Gaul
patent: 5767001 (1998-06-01), Bertagnolli et al.
patent: 6348731 (2002-02-01), Ashley et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0063311 (2002-05-01), Siniaguine
patent: 2002/0084513 (2002-07-01), Siniaguine
patent: 2002/0127868 (2002-09-01), Siniaguine
patent: 2002/0163072 (2002-11-01), Gupta et al.
patent: 2003/0215984 (2003-11-01), Pogge et al.
patent: 2004/0253809 (2004-12-01), Yao et al.
patent: 19816245 (1999-10-01), None
patent: 1094504 (2001-04-01), None
patent: 1391924 (2004-02-01), None
patent: 2816758 (2002-05-01), None
patent: 2002190477 (2002-07-01), None
patent: WO 03/079431 (2003-09-01), None
Burkett et al., “Processing Techniques for 3-D Integration Techniques”, Superficies y Vacio 13, 1-6, Dec. 2001. (6 pages).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabrication of a contact structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabrication of a contact structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabrication of a contact structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3835600

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.