Solid-state image pick-up device and imaging system using...

Details Solid-state image pick-up device and imaging system using... Solid-state image pick-up device and imaging system using...

2007-12-11

2007-12-11

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000

Reexamination Certificate

active

11054316

ABSTRACT:
The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral505denotes an N-type cathode of a photodiode,506denoting a surface P-type region for forming the photodiode into an embedded structure,508adenoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference character508bdenotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layer525to enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrode504of the transfer MOS transistor is reflected by a first layer metal521right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficienly before entering into the floating diffusion section, thereby making the aliasing extremely small.

REFERENCES:
patent: 6498622 (2002-12-01), Nakashiba
patent: 2004/0188597 (2004-09-01), Inoue et al.
patent: 2006/0214201 (2006-09-01), Rhodes
patent: 3-116840 (1991-05-01), None
patent: 2001-298177 (2001-10-01), None
patent: 2003-229556 (2003-08-01), None

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