Chromeless phase shift lithography (CPL) masks having...

Details Chromeless phase shift lithography (CPL) masks having... Chromeless phase shift lithography (CPL) masks having...

2007-02-20

2007-02-20

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

11292885

ABSTRACT:
A chromeless phase shift lithography (CPL) mask is described herein. The CPL mask includes a reticle having a phase-shifting feature pattern to produce a projected aerial image for patterning one or more large resist areas on a semiconductor substrate. The phase-shifting feature pattern includes an inner pattern comprising a plurality of phase-shifting features interspersed with non-phase-shifting areas. The phase-shifting features and the non-phase-shifting areas are arranged in a substantially alternating two-dimensional pattern surrounded by a substantially-filled phase-shifting peripheral area having a perimeter forming a pattern outline that is similar to an outline of the one or more large resist areas. Light that passes through the phase-shifting features and the phase-shifting peripheral area is phase-shifted by approximately 180 degrees from light passing through the non-phase-shifting areas of the CPL mask.

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Levinson, Harry J., “Principles of Lithography,” 2001, SPIE—The International Society for Optical Engineering, pp. 261-263.

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