Integrated circuit inductane and the fabrication method thereof

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S622000, C438S623000, C438S624000, C438S625000, C438S626000, C257SE21575

Reexamination Certificate

active

11035199

ABSTRACT:
An integrated circuit inductance and the fabrication method thereof are disclosed. The manufacture process provided by the present invention fabricates an integrated circuit inductance having a simple production process, low cost, a near equal loop size and good performance, due to making the order of the planarization processes of the inductance loops substantially perpendicular to the wafer and the direction of the current of the inductance substantially in parallel with the wafer, by way of the manufacture process of the plugs and the conductive wires of the integrated-circuit process.

REFERENCES:
patent: 6287931 (2001-09-01), Chen
patent: 2003/0148558 (2003-08-01), Kubo et al.

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