Semiconductor device contains a Pb x Sr (1−x) [Zr,...

Details Semiconductor device contains a Pb x Sr (1−x) [Zr,... Semiconductor device contains a Pb x Sr (1−x) [Zr,...

2007-06-19

2007-06-19

Nguyen, Thanh (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000

Reexamination Certificate

active

10833096

ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.

REFERENCES:
patent: 5879956 (1999-03-01), Seon et al.
patent: 6194228 (2001-02-01), Fujiki et al.
patent: 6351006 (2002-02-01), Yamakawa et al.
patent: 2000-144264 (2000-05-01), None
patent: 2000-208725 (2000-07-01), None
patent: 2000-252444 (2000-09-01), None
U.S. Appl. No. 10/833,096, filed Apr. 28, 2004, Nakazawa et al.
U.S. Appl. No. 10/865,812, filed Jun. 14, 2004, Nakazawa.

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