Method and system for forming source regions in memory devices

Details Method and system for forming source regions in memory devices Method and system for forming source regions in memory devices

2007-06-05

2007-06-05

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000

Reexamination Certificate

active

11094035

ABSTRACT:
A memory device and the method for manufacturing same is disclosed. The device comprises a first oxide layer on top of a substrate, a floating gate layer on top of the first oxide layer, a second oxide layer over the floating gate layer, wherein the second oxide layer and the floating gate layer have a first opening and a second opening respectively, and wherein the width of second opening is bigger than the width of the narrowest region of the first opening so that the floating gate layer is pulled back horizontally underneath the second oxide layer. A source region is in the substrate underneath the first oxide layer, and a third oxide layer fills in the first and second openings conforming to the contour thereof, wherein the third oxide has a third opening to reach a portion of the source region. Further, a control gate material fills in the third opening.

REFERENCES:
patent: 6057219 (2000-05-01), Cho et al.
patent: 6346442 (2002-02-01), Aloni et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 6458710 (2002-10-01), Burke
patent: 6541324 (2003-04-01), Wang
patent: 6583066 (2003-06-01), Aloni et al.
patent: 6627946 (2003-09-01), Wang
patent: 6727545 (2004-04-01), Wang et al.
patent: 6773989 (2004-08-01), Wang
patent: 6933194 (2005-08-01), Narita et al.
patent: 2002/0137355 (2002-09-01), Burke
patent: 2003/0139011 (2003-07-01), Cleeves et al.
patent: 2004/0077144 (2004-04-01), Hsieh

Affiliated with

Also associated with

Rating

Method and system for forming source regions in memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for forming source regions in memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for forming source regions in memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3833270