Substrate processing method

Details Substrate processing method Substrate processing method

2007-06-05

2007-06-05

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S776000, C438S777000, C438S792000, C257SE21267

Reexamination Certificate

active

10986323

ABSTRACT:
A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of 500° C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.

REFERENCES:
patent: 5821168 (1998-10-01), Jain
patent: 6313047 (2001-11-01), Hasebe et al.
patent: 6548422 (2003-04-01), Roy et al.
patent: 6551948 (2003-04-01), Ohmi et al.
patent: 2004/0048452 (2004-03-01), Sugawara et al.
patent: 2004/0142577 (2004-07-01), Sugawara et al.
patent: 2004/0235311 (2004-11-01), Nakanishi et al.
patent: 2004/0241968 (2004-12-01), Murakawa et al.
patent: 2004/0250771 (2004-12-01), Ozaki et al.
patent: 2005/0003660 (2005-01-01), Murakawa et al.
patent: 2005/0005844 (2005-01-01), Kitagawa et al.
patent: 2005/0153570 (2005-07-01), Matsuyama et al.
patent: 2005/0164523 (2005-07-01), Sugawara et al.
patent: 2005/0170543 (2005-08-01), Sugawara et al.
patent: 2005/0176223 (2005-08-01), Matsuyama et al.
patent: 2002-151684 (2002-05-01), None
patent: 2002-343792 (2002-11-01), None
patent: 2003-142482 (2003-05-01), None
patent: WO 02/054474 (2002-07-01), None
patent: WO 03/019644 (2003-03-01), None

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