Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-12-11
2007-12-11
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S210130
Reexamination Certificate
active
11267805
ABSTRACT:
A semiconductor memory device includes a memory cell array, and first and second boosting voltage generating portions. The first boosting voltage generating portion generates a first driving signal when the semiconductor device operates in an active mode and supplies a boosting voltage that is higher than a power supply voltage to an output terminal in response to the first driving signal. The second boosting voltage generating portion includes a first boosting voltage generator generating a second driving signal when a level of the boosting voltage of the output terminal is below a target level in the active mode and pumping the boosting voltage in response to the second driving signal and a second boosting voltage generator pumping the boosting voltage in response to the first driving signal when first memory cell array blocks are selected and pumping the boosting voltage in response to the second driving signal when second memory cell array blocks are selected.
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Dinh Son
King Douglas
Mills & Onello LLP
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