Method for writing data into a memory cell of a conductive...

Details Method for writing data into a memory cell of a conductive... Method for writing data into a memory cell of a conductive...

2007-08-14

2007-08-14

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189020, C365S189090

Reexamination Certificate

active

11222282

ABSTRACT:
The present invention refers to a method for writing data into a memory cell of a conductive bridging random access memory and to a memory circuit comprising memory cells with programmable metallization cells, particularly a CBRAM memory circuit. The embodiments of the prevent invention provide a method and a memory circuit for holding adjacently arranged bit lines at writing voltages during a writing operation of a selected memory cell to reduce voltage crosstalk.

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M.N. Kozicki, M. Mitkova, J. Zhu, M. Park, and C. Gopalan, “Can Solid State Electrochemistry Eliminate The Memory Scaling Quandary?” Extended Abstracts of the 2002 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, Jun. 2002.

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