Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-07
2007-08-07
Tran, Minh-Loan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C257S059000, C257S072000, C257SE21320
Reexamination Certificate
active
11080793
ABSTRACT:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer; forming a semiconductor layer; forming a lower data line; forming an upper data line including a source electrode and a drain electrode, the upper data line including a portion disposed on the semiconductor layer without interposing the lower data line; forming a passivation layer having a first contact hole exposing the drain electrode at least in part; and forming a pixel electrode on the first contact hole to contact the drain electrode.
REFERENCES:
patent: 7005670 (2006-02-01), Kim et al.
patent: 7138655 (2006-11-01), Tak et al.
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