Method of manufacturing a BiMOS device

Details Method of manufacturing a BiMOS device Method of manufacturing a BiMOS device

1994-05-17

1996-06-04

Fourson, George

Fishing, trapping, and vermin destroying

437 59, 437189, 437191, 148DIG9, H01L 21265

Patent

active

055232426

ABSTRACT:
A method of manufacturing a semiconductor device. A semiconductor substrate is prepared and a gate oxide film is formed on a surface of the semiconductor substrate. The gate oxide film is selectively removed to expose portions of the semiconductor substrate and a first polysilicon layer is formed on a resultant semiconductor structure. Impurities are implanted in the polysilicon layer and a resultant semiconductor structure is annealed to activate the impurities. The first polysilicon layer is patterned to form a base electrode of the bipolar transistor and a source drain electrode of the MOS transistor. An insulating layer is then formed on a resultant semiconductor structure. Portions of the semiconductor substrate are then selectively exposed and a second polysilicon layer is formed on a resultant semiconductor structure. The second polysilicon layer is then patterned to form an emitter electrode of the bipolar transistor.

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