Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-20
2007-02-20
Doan, Theresa T. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S157000
Reexamination Certificate
active
10913409
ABSTRACT:
A method of forming a semiconductor device includes forming a fin on an insulating layer, where the fin includes a number of side surfaces, a top surface and a bottom surface. The method also includes forming a gate on the insulating layer, where the gate has a substantially U-shaped cross-section at a channel region of the semiconductor device.
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Ahmed Shibly S.
An Judy Xilin
Dakshina-Murthy Srikanteswara
Krivokapic Zoran
Wang Haihong
Advanced Micro Devices , Inc.
Doan Theresa T.
Harrity & Snyder LLP
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