Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-23
2007-10-23
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S407000, C257S412000
Reexamination Certificate
active
10816232
ABSTRACT:
A transistor comprising a gate electrode formed on a gate dielectric layer formed on a substrate. A pair of source/drain regions are formed in the substrate on opposite sides of the laterally opposite sidewalls of the gate electrode. The gate electrode has a central portion formed on the gate dielectric layer and over the substrate region between the source and drain regions and a pair sidewall portions which overlap a portion of the source/drain regions wherein the central portion has a first work function and said pair of sidewall portions has a second work function, wherein the second work function is different than the first work function.
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Chau Robert S.
Doczy Mark
Doyle Brian
Hareland Scott A.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Wojciechowicz Edward
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