Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2007-02-20
2007-02-20
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S676000, C257S780000, C257S781000, C257S782000, C257S784000, C257SE33066, C257SE23039
Reexamination Certificate
active
11039432
ABSTRACT:
A lead frame for improving molding reliability and a semiconductor package with the lead frame are proposed. At least one embossed structure, such as a metal bump or recessed portion, is formed on a bonding layer of a wire-bonding area of the lead frame. At least one semiconductor chip is electrically connected to the lead frame via bonding wires bonded to the bonding layer. During a molding process for fabricating an encapsulant to encapsulate the chip, the bonding wires and a portion of the lead frame, the embossed structure makes the bonding layer become uneven and thus increases the contact area and adhesion between the bonding layer and the encapsulant, so as to prevent cracks of the bonding wires and improve the electrical performances and molding reliability.
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Chiang Lien-Chen
Lin Wei-Sheng
Clark Jasmine
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Jenson Steven M.
Siliconware Precision Industries Co. Ltd.
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