Semiconductor manufacturing method

Details Semiconductor manufacturing method Semiconductor manufacturing method

2007-12-11

2007-12-11

Landau, Matthew C. (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S154000, C438S157000, C438S158000, C257SE21412

Reexamination Certificate

active

10294032

ABSTRACT:
It is an object of the invention that, in semiconductor device, in order to promote the tendency of miniaturization of each display pixel pitch, which will be resulted in with the tendency toward the higher precision (increase of pixel number) and further miniaturizations, a plurality of elements is formed within a limited area and the area occupied by the elements is compacted so as to be integrated. A plurality of semiconductor layers13, 15is formed on different layers with insulating film14sandwiched therebetween. After carrying out crystallization by means of laser beam, on each semiconductor layer (semiconductor layers16, 17having crystal structure respectively), an N-channel type TFT of inversed stagger structure and a P-channel type TFT30of top gate structure are formed respectively and integrated so that the size of CMOS circuit is miniaturized.

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