Static information storage and retrieval – Powering
Reexamination Certificate
2007-06-26
2007-06-26
Lam, David (Department: 2827)
Static information storage and retrieval
Powering
C365S185180, C365S189090
Reexamination Certificate
active
11365499
ABSTRACT:
A semiconductor processing device is provided which includes a nonvolatile memory unit, a voltage generating unit, and a first terminal. The voltage generating unit generates a first voltage generated from an operation voltage provided from outside of the semiconductor processing device and provides the first voltage to the nonvolatile memory unit for storing data therein. The first terminal provides the first voltage generated by the voltage generating unit to outside of the semiconductor processing device. This first voltage provided to outside of the semiconductor processing device via the first terminal permits checking a voltage level of the first voltage and correcting this voltage level.
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Eng. language translation of “Notification of Reasons for Refusal” for H96038961 (8 pgs.).
English translation of Japanese Office Action dated Jul. 25, 2006.
Ishikawa Eiichi
Matsubara Kiyoshi
Saito Yasuyuki
Sato Masanao
Yada Naoki
Antonelli, Terry Stout & Kraus, LLP.
Lam David
Renesas Technology Corp.
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