Method for manufacturing semiconductor device using...

Details Method for manufacturing semiconductor device using... Method for manufacturing semiconductor device using...

2007-11-27

2007-11-27

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S642000

Reexamination Certificate

active

11019250

ABSTRACT:
A method for manufacturing a semiconductor device using a dual-damascene pattern, where a photosensitive film is coated instead of a dielectric material, the photosensitive film is cured, and the photosensitive film is entirely etched. The method includes forming a first conductor on a first insulation film deposited on a semiconductor substrate, and depositing second, third, and fourth insulation films on the first insulation. The method also includes forming holes by selectively removing the fourth and third films, forming a fifth insulation film where the holes are filled with the fifth film, and forming a sixth insulation film on the fifth and fourth films. The method further includes forming a trench mask pattern on the sixth film, forming trench line holes and trench via holes using the pattern and forming a barrier metal film and a second conductor, where the line and via holes are filled with the second conductor.

REFERENCES:
patent: 6326296 (2001-12-01), Tsai et al.
patent: 6399478 (2002-06-01), Matsubara et al.
patent: 6898851 (2005-05-01), Nishioka et al.
patent: 2005/0101125 (2005-05-01), Smith et al.
patent: 2001-0027671 (2001-04-01), None

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