Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-15
2007-05-15
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000
Reexamination Certificate
active
11153510
ABSTRACT:
Method for connecting an integrated circuit to a substrate and corresponding circuit arrangementThe present invention provides a method for connecting an integrated circuit (C1), in particular a chip or a wafer or a hybrid, to a substrate (C2), which has the following steps: provision of a first electrical contact structure (KF1, BP, LB; KF1, BP′) on a first main area (HF1) of the integrated circuit (C1); provision of a corresponding second electrical contact structure (KF2) on a second main area (HF2) of the substrate (C2); at least one of the contact structures, the first electrical contact structure (KF1, BP, LB; KF1, BP′) or the second electrical contact structure (KF2), being elastic; placement of the first electrical contact structure (KF1, BP, LB; KF1, BP′) onto the corresponding second electrical contact structure (KF2), so that both are in electrical contact and under mechanical compression pressure (P); and connection of a region of the main area (HF1) surrounding the first electrical contact structure (KF1, BP, LB; KF1, BP′) to a corresponding region surrounding the second electrical contact structure (KF2) of the second main area (HF2) by an adhesive layer (KS), so that the first electrical contact structure (KF1, BP, LB; KF1, BP′) and/or the second electrical contact structure (KF2) are compressed in the connected state. The invention likewise provides a corresponding circuit arrangement.
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Hedler Harry
Meyer Thorsten
Infineon - Technologies AG
Jenkins Wilson Taylor & Hunt, P.A.
Le Thao P.
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