Semiconductor memory device and method of manufacturing the...

Details Semiconductor memory device and method of manufacturing the... Semiconductor memory device and method of manufacturing the...

2007-05-08

2007-05-08

Fourson, George R. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S304000, C257SE27092, C257SE29346, C257SE21396, C257SE21664, C438S243000, C438S386000

Reexamination Certificate

active

10959223

ABSTRACT:
A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a semiconductor wafer, a trench ferroelectric capacitor formed in the semiconductor wafer in one source/drain of the field effect transistor, wherein one electrode thereof is connected to the source/drain, and a wiring formed in the semiconductor wafer and connected to the other electrode of the trench ferroelectric capacitor.

REFERENCES:
patent: 5903492 (1999-05-01), Takashima
patent: 6015990 (2000-01-01), Hieda et al.
patent: 6521938 (2003-02-01), Hamamoto
patent: 10-303396 (1998-11-01), None

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