Method of forming highly conductive semiconductor structures...

Details Method of forming highly conductive semiconductor structures... Method of forming highly conductive semiconductor structures...

2007-05-15

2007-05-15

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S644000, C438S654000, C438S720000, C257SE21584, C257SE21514

Reexamination Certificate

active

09805273

ABSTRACT:
A process for making semiconductor structures uses a decoupled plasma source to produce a highly selective plasma etchant to form a structure with a thin adhesive layer and overlaying conductive layer. The preferred plasma is formed from chlorine and oxygen feed gases. The highly conductive semiconductor structure has a thickness less than about 3000 Å, preferably less than about 2600 Å, and incorporates an adhesive layer that is preferably less than about 100 Å thick. Despite the reduced profile and topography of the structure, it is more conductive than prior structures, and provides a robust device.

REFERENCES:
patent: 4778563 (1988-10-01), Stone
patent: 5338398 (1994-08-01), Szwejkowski et al.
patent: 5645683 (1997-07-01), Miyamoto
patent: 6037265 (2000-03-01), Mui et al.
patent: 6074956 (2000-06-01), Yang et al.
patent: 6124212 (2000-09-01), Fan et al.
patent: 6159794 (2000-12-01), Yang et al.
patent: 6191045 (2001-02-01), Yoshigai et al.
patent: 6207580 (2001-03-01), Costaganna
patent: 6277763 (2001-08-01), Kugimiya et al.
patent: 6358859 (2002-03-01), Lo et al.
patent: 6521505 (2003-02-01), Kawahara
patent: 6639288 (2003-10-01), Kunikiyo
patent: 00932190 (1999-07-01), None
patent: 02084723 (1990-03-01), None
patent: 2002261267 (2002-09-01), None
patent: WO 96/27899 (1996-09-01), None

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