Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-10-09
2007-10-09
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S501000, C257S515000, C257S506000, C257S513000, C257S524000, C438S221000, C438S396000, C438S253000, C438S345000, C438S219000, C438S295000, C438S355000, C438S404000
Reexamination Certificate
active
11139002
ABSTRACT:
To suppress occurrence of dislocation in a substrate of a semiconductor device at an end portion of a gate electrode. Provided is a semiconductor device having a plurality of element formation regions formed over the main surface of a semiconductor substrate, an element isolation trench located between the element formation regions and having an element isolation insulating film embedded therein, and a gate insulating film, a gate electrode and a plurality of interconnect layers formed thereabove, each formed in the element formation region, wherein the element isolation trench has a thermal oxide film formed between the semiconductor substrate and the element isolation insulating film, and the element isolation film has a great number of micro-pores formed inside thereof and is more porous than the thermal oxide film.
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Ishitsuka Norio
Iwasaki Tomio
Ohta Hiroyuki
Tanaka Jun
Nguyen Joseph
Parker Kenneth
Renesas Technology Corp.
Townsend and Townsend / and Crew LLP
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