Strained silicon-on-insulator by anodization of a buried p+...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S311000, C438S409000, C438S413000, C438S479000, C438S481000, C438S967000, C257SE21562, C257SE21563, C257SE21565

Reexamination Certificate

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10883887

ABSTRACT:
A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semiconductor layers is a doped and relaxed semiconductor layer underneath a strained semiconductor layer; converting the doped and relaxed semiconductor layer into a porous semiconductor via an electrolytic anodization process, and oxidizing to convert the porous semiconductor layer into a buried oxide layer. The method provides a SSOI substrate that includes a relaxed semiconductor layer on a substrate; a high-quality buried oxide layer on the relaxed semiconductor layer; and a strained semiconductor layer on the high-quality buried oxide layer. In accordance with the present invention, the relaxed semiconductor layer and the strained semiconductor layer have identical crystallographic orientations.

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