Magnetoresistive element, method for making the same, and...

Details Magnetoresistive element, method for making the same, and... Magnetoresistive element, method for making the same, and...

2007-02-06

2007-02-06

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S296000

Reexamination Certificate

active

10328118

ABSTRACT:
A magnetoresistive element including a free layer having rotatable magnetization, in which information is recorded in the magnetoresistive element by the rotation of the magnetization of the free layer, is provided. The free layer is a laminate that includes at least one ferromagnetic sublayer composed of a ferromagnetic material and at least one low-saturation-magnetization ferromagnetic sublayer having a lower saturation magnetization than that of the ferromagnetic sublayer.

REFERENCES:
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6567246 (2003-05-01), Sakakima et al.
patent: 6600184 (2003-07-01), Gill
patent: 6788502 (2004-09-01), Gill

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