Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-06-05

2007-06-05

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S531000, C257S588000, C336S174000

Reexamination Certificate

active

10221802

ABSTRACT:
The present invention is related to a semiconductor device that forms an inductor on the same semiconductor substrate together with other active elements and a manufacturing method thereof. The semiconductor device of the present invention comprises a first conductivity type substrate, first semiconductor layer of a first conducting type with an impurity concentration lower than the substrate and a second semiconductor layer of a second conducting type on the first layer, an insulating film formed on this high-resistance semiconductor layer, and an inductor formed on this insulating film. The inductor has conducting film defining a width of the inductor. The first and second semiconductor layers are each formed under and at least as long as the width of the inductor.

REFERENCES:
patent: 5268309 (1993-12-01), Mizutani et al.
patent: 5578860 (1996-11-01), Costa et al.
patent: 6225182 (2001-05-01), Chu
patent: 6236101 (2001-05-01), Erdeljac et al.
patent: 2001/0009795 (2001-07-01), Chu
patent: 09-999579 (2000-05-01), None
patent: 52-116002 (1977-09-01), None
patent: 55-101066 (1980-07-01), None
patent: 05-264347 (1992-10-01), None
patent: 2000-150783 (2000-05-01), None
patent: 2001-89296 (2001-04-01), None
patent: 2000-035195 (2000-06-01), None
patent: 2001-030145 (2001-04-01), None
patent: 437085 (2001-05-01), None

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