Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-01
2007-05-01
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S643000
Reexamination Certificate
active
11230525
ABSTRACT:
In a wiring structure of a semiconductor device, dielectric tolerance of the wiring is improved by preventing diffusion of the wiring material. The wiring structure of the semiconductor device includes a first insulating film having plural grooves, plural wiring films formed protrusively above tops of the first insulating film among the grooves, plural barrier films formed on bottoms of the wiring films and up to a position on sides of the wiring films higher than the tops of the first insulating film; first cap films comprising metal films formed on tops of the wiring films, and a second cap film formed on at least respective sides of the first cap films and the barrier films.
REFERENCES:
patent: 4910580 (1990-03-01), Kuecher et al.
patent: 4933743 (1990-06-01), Thomas et al.
patent: 4970574 (1990-11-01), Tsunenari
patent: 6107687 (2000-08-01), Fukada et al.
patent: 6150720 (2000-11-01), Yamaha et al.
patent: 6153523 (2000-11-01), Van Ngo et al.
patent: 6177701 (2001-01-01), Matsumoto
patent: 6261952 (2001-07-01), Ngo et al.
patent: 6274499 (2001-08-01), Gupta et al.
patent: 6329701 (2001-12-01), Ngo et al.
patent: 6380084 (2002-04-01), Lim et al.
patent: 6465345 (2002-10-01), Nogami et al.
patent: 6479384 (2002-11-01), Komai et al.
patent: 6674170 (2004-01-01), Ngo et al.
patent: 6680514 (2004-01-01), Geffken et al.
patent: 6720657 (2004-04-01), Suguro
patent: 6958291 (2005-10-01), Yu et al.
patent: 6969911 (2005-11-01), Abe
patent: 7008871 (2006-03-01), Andricacos et al.
patent: 2002/0093035 (2002-07-01), Jin et al.
patent: 2005/0087872 (2005-04-01), Abe
patent: 06-120210 (1994-04-01), None
patent: 07-122642 (1995-05-01), None
patent: 10-189590 (1998-07-01), None
patent: 10-261635 (1998-09-01), None
patent: 10-270448 (1998-10-01), None
patent: 2000-323479 (2000-11-01), None
patent: 2001-358105 (2001-12-01), None
patent: 2002-329780 (2002-11-01), None
patent: 2003-179000 (2003-06-01), None
Oki Electric Industry Co. Ltd.
Picardat Kevin M.
Volentine & Whitt P.L.L.C.
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