Multibit phase change memory device and method of driving...

Details Multibit phase change memory device and method of driving... Multibit phase change memory device and method of driving...

2007-06-19

2007-06-19

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S129000

Reexamination Certificate

active

11082054

ABSTRACT:
A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.

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Kelly Daly-Flynn et al., “InSbTe Phase-Change Materials for High Performance Multi-Level Recording,” Jpn. J. Appl. Phys. vol. 42 (2003) pp. 795-799, Feb. 2003.
Bo Liu et al., “Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory,” Inst. of Physics Publ., Semicond. Sci. Technol. 19 (2004) L61-L64, Apr. 21, 2004.

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