Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-15
2007-05-15
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S310000, C257SE27104, C257SE21663
Reexamination Certificate
active
10384002
ABSTRACT:
A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.
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Abstract RD 405035 A.
Adkisson James William
Black Charles Thomas
Grill Alfred
Mann Randy William
Neumayer Deborah Ann
Estrada Michelle
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
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