Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-30
2007-01-30
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S388000
Reexamination Certificate
active
11025142
ABSTRACT:
A semiconductor processing method of forming a conductive gate or gate line over a substrate includes, a) forming a conductive gate over a gate dielectric layer on a substrate, the gate having sidewalls and an interface with the gate dielectric layer; b) electrically insulating the gate sidewalls; and c) after electrically insulating the gate sidewalls, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate interface with the gate dielectric layer. According to one aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision of a first insulating material and subsequent anisotropic etch thereof to insulate the gate sidewalls. According to another aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision of first and second insulating materials and subsequent anisotropic etch thereof to insulate the gate sidewalls. According to another aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision and subsequent anisotropic etch of a first insulating material, followed by provision and subsequent anisotropic etch of a second insulating material.
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Micro)n Technology, Inc.
Trinh Michael
Wells St. John P.S.
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