Semiconductor device and manufacturing method thereof

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21591

Reexamination Certificate

active

10998221

ABSTRACT:
The semiconductor device fabrication method of the present invention includes forming metal wirings on a semiconductor substrate, forming a first blocking layer on the semiconductor substrate and the metal wiring, forming a first FSG on the first blocking layer, forming a second blocking layer on the first FSG, forming a second FSG on the second blocking layer, and forming a protection layer on the second FSG.

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Wolf et al., Silicon Processing for the VLSI Era, vol. 2, Lattice Press, 1990, pp. 196-199.

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