Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-27
2007-02-27
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21591
Reexamination Certificate
active
10998221
ABSTRACT:
The semiconductor device fabrication method of the present invention includes forming metal wirings on a semiconductor substrate, forming a first blocking layer on the semiconductor substrate and the metal wiring, forming a first FSG on the first blocking layer, forming a second blocking layer on the first FSG, forming a second FSG on the second blocking layer, and forming a protection layer on the second FSG.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Lindsay, Jr. Walter
Stevenson Andre′
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