Semiconductor device including FinFET having vertical double...

Details Semiconductor device including FinFET having vertical double... Semiconductor device including FinFET having vertical double...

2007-05-22

2007-05-22

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S347000, C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000

Reexamination Certificate

active

11050437

ABSTRACT:
A semiconductor device includes a semiconductor layer formed on a semiconductor substrate via an insulating film and having a projecting shape, a gate electrode formed, via a gate insulating film, on a pair of side surfaces of four side surfaces of the semiconductor layer and a source region and drain region formed on two side surfaces, on which the gate electrode is not formed, of the four side surfaces of the semiconductor layer. A portion of a channel region formed in the semiconductor layer is electrically connected to the gate electrode.

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