Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-11-27
2007-11-27
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S185330, C365S185290, C365S185120
Reexamination Certificate
active
10694861
ABSTRACT:
A plurality of memory cell arrays Array0, Array1, Array2, Array3, Array4, Array5, Array6and Array7which can perform a parallel operation are arranged in a later generation chip. Each of the memory cell arrays Array0and Array4, the memory cell arrays Array1and Array5, the memory cell arrays Array2and Array6, and the memory cell arrays Array3and Array7constitutes one cell array group. A Pass/Fail signal indicative of success or failure of the operation is outputted in accordance with each cell array group. It is good to make the number of cell array groups equal to the number of memory cell arrays or the number of cell array groups of a precedent generation chip.
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Nakamura Hiroshi
Yamamura Toshio
Dinh Son
Kabushiki Kaisha Toshiba
Nguyen N
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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