Lanthanide doped TiO x dielectric films

Details Lanthanide doped TiO x dielectric films Lanthanide doped TiO x dielectric films

2007-06-26

2007-06-26

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S310000

Reexamination Certificate

active

10789044

ABSTRACT:
A dielectric film containing lanthamide doped TiOxand a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by ion assisted electron beam evaporation of TiO2and electron beam evaporation of a lanthamide selected from a group consisting of Nd, Tb, and Dy. The growth rate is controlled to provide a dielectric film having a lanthamide content ranging from about ten to about thirty percent of the dielectric film. These dielectric films containing lanthamide doped TiOxare amorphous and thermodynamically stable such that the lanthamide doped TiOxwill have minimal reactions with a silicon substrate or other structures during processing.

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