Thin film transistor, method of fabricating the same, and...

Details Thin film transistor, method of fabricating the same, and... Thin film transistor, method of fabricating the same, and...

2007-06-26

2007-06-26

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S336000, C257SE31126, C257SE29117, C438S151000, C438S163000

Reexamination Certificate

active

10992131

ABSTRACT:
A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate electrode may be formed of a conductive metal film pattern and a conductive oxide film covering the conductive metal film pattern. The source/drain regions may include an LDD region, and the LDD region may at least partially overlap with the gate electrode.

REFERENCES:
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patent: 5612234 (1997-03-01), Ha
patent: 6562671 (2003-05-01), Ohnuma
patent: 2002/0142554 (2002-10-01), Nakajima
patent: 2004/0089878 (2004-05-01), Takehashi et al.
patent: 07-226515 (1995-08-01), None
patent: 10-200121 (1998-07-01), None
patent: 2004-349604 (2004-12-01), None
patent: 10-1998-0032842 (1998-07-01), None

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