Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-16
2007-01-16
Owens, Douglas W. (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S631000, C438S597000
Reexamination Certificate
active
10917289
ABSTRACT:
In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film17for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film44constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film17is smaller than that contained in the silicon nitride film44, making it possible to suppress hydrogen release from the silicon nitride film17.
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Fujiwara Tsuyoshi
Ichinose Katsuhiko
Ohashi Naohumi
Saito Tetsuo
Ushiyama Masahiro
Antonelli, Terry Stout & Kraus, LLP.
Gebremariam Samuel A.
Hitachi Tokyo Electronics Co. Ltd.
Owens Douglas W.
Renesas Technology Corp.
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