Semiconductor device

Details Semiconductor device Semiconductor device

2007-02-20

2007-02-20

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S372000, C257S394000, C257S618000, C257S653000, C257S773000

Reexamination Certificate

active

11002322

ABSTRACT:
The present invention provides a semiconductor device having an active region bent at right angles, wherein an interval between patterns for the active region and a gate is set larger than an arc radius of a curved portion (portion where a line is brought to arcuate form) formed inside the pattern for the bent active region. By defining and designing the pattern interval, the curved portion of the active region do not overlap the gate pattern, and the difference between a device characteristic and a designed value can be prevented from increasing.

REFERENCES:
patent: 6434053 (2002-08-01), Fujiwara
patent: 2002/0001927 (2002-01-01), Kawai
patent: 2003/0049940 (2003-03-01), Matsuhashi et al.

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