Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-02-20
2007-02-20
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S238000, C438S381000, C438S692000, C257SE21019, C257SE21174, C257SE21649
Reexamination Certificate
active
11054130
ABSTRACT:
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
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PCT/US03/21637; filed Oct. 2003; Search Report; 10 pp.
WEBSITE: http://www.answers.com/topic
oble-metal, to find general definition of noble metal material, reprinted Jan. 10, 2006, 4 pgs.
WEBSITE: http://en.wikipedia.org/wiki/Electrolysis, to find general process of electrolysis, reprinted Jan. 10, 2006, 3 pgs.
Collins Dale W.
Klein Rita J.
Lane Richard H.
Nhu David
Wells St. John P.S.
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