Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-13
2007-02-13
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S675000
Reexamination Certificate
active
10923827
ABSTRACT:
A method for fabricating an electronic device includes: a step of forming a first conductor to become a wiring or a wiring plug in a first insulating film; a step of forming a second insulating film on the first insulating film and the first conductor and, after that, forming a hole reaching the top face of the first conductor in the second insulating film; a step of forming a first barrier metal film on a bottom and side walls of the hole and on the second insulating film; a step of removing a portion formed on the bottom of the hole in the first barrier metal film to thereby expose the top face of the first conductor; a step of performing a plasma process using a reducing gas after the step of exposing the top face of the first conductor; and a step of forming a second conductor to become a wiring plug or a wiring by filling a conductive film in the hole after the step of performing the plasma process.
REFERENCES:
patent: 6893953 (2005-05-01), Hoshino et al.
patent: 6949457 (2005-09-01), Fiordalice et al.
patent: 2000-323571 (2000-11-01), None
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